Xilinx Field Programmable Gate Array, Part #: HW-MUSB-3090136 is built on a state-of-the-art, high-performance, low-power (HPL), 28 nm, high-k metal gate (HKMG) process technology, 7 series FPGAs enable an unparalleled increase in system performance with 2.9 Tb/s of I/O bandwidth, 2 million logic cell capacity, and 5.3 TMAC/s DSP, while consuming 50% less power than previous generation devices to offer a fully programmable alternative to ASSPs and ASICs. 

Features

• Advanced high-performance FPGA logic based on real 6-input lookup table (LUT) technology configurable as distributed memory. • 36 Kb dual-port block RAM with built-in FIFO logic for on-chip data buffering. • High-performance SelectIO™ technology with support for DDR3 interfaces up to 1,866 Mb/s. • High-speed serial connectivity with built-in multi-gigabit transceivers from 600 Mb/s to max. rates of 6.6 Gb/s up to 28.05 Gb/s, offering a special low-power mode, optimized for chip-to-chip interfaces. • A user configurable analog interface (XADC), incorporating dual 12-bit 1MSPS analog-to-digital converters with on-chip thermal and supply sensors. • DSP slices with 25 x 18 multiplier, 48-bit accumulator, and pre-adder for high-performance filtering, including optimized symmetric coefficient filtering.

• Powerful clock management tiles (CMT), combining phase-locked loop (PLL) and mixed-mode clock manager (MMCM) blocks for high precision and low jitter. • Quickly deploy embedded processing with MicroBlaze™ processor. • Integrated block for PCI Express® (PCIe), for up to x8 Gen3 Endpoint and Root Port designs. • Wide variety of configuration options, including support for commodity memories, 256-bit AES encryption with HMAC/SHA-256 authentication, and built-in SEU detection and correction. • Low-cost, wire-bond, bare-die flip-chip, and high signal integrity flipchip packaging offering easy migration between family members in the same package. All packages available in Pb-free and selected packages in Pb option. • Designed for high performance and lowest power with 28 nm, HKMG, HPL process, 1.0V core voltage process technology and 0.9V core voltage option for even lower power.

XLX:HW-MUSB-3090136

HW-MUSB-3090136