Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E TR | Dynamic random access memory | DEX

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$3.92

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E TR | Dynamic random access memory | DEX

Description

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E TR features: 

  • VDD = VDDQ = 1.2V +/-60mv
  • VPP = 2.5V, -125mV, +/-250mV
  • On-die, internal, adjustable VREFDQ generation
  • 1.2V pseudo open-drain I/O
  • Refresh time of 8192-cycle at TC temperature range:
  • 16 internal banks (x4, x8): 4 groups of 4 banks each
  • 8n-bit prefetch architecture
  • Programmable data strobe preambles
  • Data strobe preamble training 
  • Command/Address latency (CAL)
  • Multipurpose register READ and WRITE capability
  • Write Leveling
  • Self refresh mode
  • Low-power auto self refresh (LPSAR)
  • Temperature controlled refresh (TCR)
  • Fine granularity refresh
  • Self refresh abort
  • Maximum power saving
  • Output driver calibration
  • Nominal, park and dynamic on-die termination (ODT)
  • Data bus inversion (DBI) for data bus
  • Command/Address (CA) parity
  • Databus write cyclic redundancy check (CRC)
  • Per-DRAM addressability
  • Connectivity test
  • JEDEC JESD-79-4 compliant 
  • sPPR and hPPR capability 
  • MBIST-PPR support (Die Revision R only)

 

MIL:MT40A1G8SA-062E AIT E TR

MT40A1G8SA-062E AIT:E TR

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E TR | Dynamic random access memory | DEX

$3.92