The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks 
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• Refresh maximum interval time at TC temperature range – 64ms at –40°C to +85°C – 32ms at +85°C to +105°C – 16ms at +105°C to +115°C – 8ms at +115°C to +125°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration • AEC-Q100
• PPAP submission
• 8D response time

MIL:MT41K256M8DA-125 AIT:K TR

MT41K256M8DA-125 AIT:K TR