Micron Technology DRAM RLDRAM3, Part #MT41K256M8DA-125 AIT:K TR | Dynamic random access memory | DEX

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$3.26

Micron Technology DRAM RLDRAM3, Part #MT41K256M8DA-125 AIT:K TR | Dynamic random access memory | DEX

Description

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

Features

  • VDD = VDDQ = 1.35V (1.283–1.45V)
  • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks 
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS (READ) latency (CL)
  • Programmable posted CAS additive latency (AL)
  • Programmable CAS (WRITE) latency (CWL)
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Self refresh mode
  • Refresh maximum interval time at TC temperature range – 64ms at –40°C to +85°C – 32ms at +85°C to +105°C – 16ms at +105°C to +115°C – 8ms at +115°C to +125°C
  • Self refresh temperature (SRT)
  • Automatic self refresh (ASR)
  • Write leveling
  • Multipurpose register
  • Output driver calibration • AEC-Q100
  • PPAP submission
  • 8D response time

 

MIL:MT41K256M8DA-125 AIT:K TR

MT41K256M8DA-125 AIT:K TR

Micron Technology DRAM RLDRAM3, Part #MT41K256M8DA-125 AIT:K TR | Dynamic random access memory | DEX

$3.26